A Novel Method to obtain Reverse bias I-V Curves for Single Cells Integrated in Photovoltaic Modules.
 
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1
Department of Electronic, Faculty of Technology, University of M’sila, P.O. Box 166, 28000 M’sila, Algeria
 
2
Faculty of Technology, University of M’sila, P.O. Box 166, 28000 M’sila, Algeria
 
 
Corresponding author
DRIF MAHMOUD   

Department of Electronic, Faculty of Technology, University of M’sila, P.O. Box 166, 28000 M’sila, Algeria
 
 
Power Electronics and Drives 2024;9 (44)
 
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ABSTRACT
Despite the existence of accurate mathematical models facilitating the analysis of PV sources’ behavior under diverse conditions, including normal operation and situations involving mismatch phenomena such as partial shadowing and various faults, an important issue still persists. Crucial parameters essential for adjusting these models, particularly those related to reverse-biased characteristics such as breakdown voltage, are often absent in manufacturers' datasheets. This omission presents a substantial challenge, as it restricts the ability to acquire comprehensive and accurate information of PV devices in the second quadrant. To address this issue, our research introduces a novel method for measuring the reverse-biased I-V characteristics of individual PV cells within a module without having to dissociate them from the module encapsulants. The process involves measuring the forward-bias I-V curves of both fully illuminated PV module and a partially shaded PV module with only one completely shaded cell. Thus, the reverse I-V curve can easily be derived from these forward bias I-V curves. Finally, the proposed method serves as a non-destructive technique for characterizing solar cells in the second quadrant. This innovative approach offers a promising solution for assessing the performance and health of PV modules without causing damage and may result in significant cost savings.
eISSN:2543-4292
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